High efficient terahertz emission from InN surfaces

被引：19
|
作者：
Cimalla, Volker
Pradarutti, Boris
Matthaeus, Gabor
Brueckner, Claudia
Rjehemann, Stefan
Notni, Gunther
Nolte, Stefan
Tuennermann, Andreas
Lebedev, Vadim
Ambacher, Oliver
机构：
[1] Tech Univ Ilmenau, Inst Micro & Nanotechnol, D-98684 Ilmenau, Germany
[2] Fraunhofer IOF, D-07745 Jena, Germany
[3] Inst Appl Phys, D-07743 Jena, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 06期
关键词：
D O I：
10.1002/pssb.200674893
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Terahertz radiation was measured from InN and compared to p-InAs excited by femtosecond optical pulses at 1060 and 800 mn. At 800 mn, atomically smooth InN with low background electron concentration exhibit higher THz emission than the highly effective material p-InAs. The higher THz emission efficiency of InN is caused by the absences of any intervalley scattering, which in the case of InAs increases the effective mass of the photo generated electrons and, thus, reduces the Dember field, which is responsible for THz emission. Consequently, InN is a promising material for THz emission; however, further improvement of the material quality (surface roughness and carrier concentration) is needed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1829 / 1833
页数：5
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