Pseudo Multi-Port SRAM Circuit for Image Processing in Display Drivers

被引:3
|
作者
Lam, Hing-Mo [1 ,2 ]
Guo, Fan [2 ]
Qiu, Hezi [1 ,2 ]
Zhang, Min [2 ]
Jiao, Hailong [2 ]
Zhang, Shengdong [1 ,2 ]
机构
[1] Peking Univ, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
Image processing; filter; memory circuit; line-buffer; display driver;
D O I
10.1109/TCSVT.2020.2979046
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
NxN filter operations are frequently used in various image processing algorithms in display driver circuits. The implementation of the NxN filter requires a storage element to temporarily retain N or N-1 lines of display data. The traditional approach for this temporary storage element for NxN image filter is either by using N blocks of memory to store N lines of display data with single-port six-transistor (6T) SRAM bit-cells or by using N-1 blocks of memory to store N-1 lines of display data with dual-port eight-transistor (8T) SRAM bit-cells. In this paper, a pseudo multi-port SRAM circuit is proposed for NxN filter in image processing in a display driver integrated circuit (IC). By using pre-read mechanism and word-line/column selection signal forwarding technique, the proposed approach only stores N-1 lines of display data and can use the small single-port 6T SRAM bit-cells. For a 3 x 3 filter application, the proposed approach reduces the overall layout area by 50.3% and 30.2% compared to the traditional dual-port 8T and single-port 6T memory implementations, respectively, in an industrial 0.18-mu m CMOS technology. Furthermore, the power used to perform a 3x3 filter operation is reduced by 47% and 30.8% with the proposed approach as compared to the traditional dual-port 8T and signal-port 6T memory circuits, respectively, with slight degradation of the access speed.
引用
收藏
页码:2056 / 2062
页数:7
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