Electronic surface states at semiconductor/solution interfaces can mediate processes such as trapping and detrapping of majority and minority charge carriers, recombination, or charge transfer to or from the solution. We have calculated the complete impedance response due to these processes using a kinetic approach. Specific cases are discussed and diagnostic parameters for the capacitance and conductance are presented. Experimental results on n-Si(111) in fluoride solutions are used to illustrate the obtained expressions. (C) 1998 American Institute of Physics.
机构:Mineral Processing Section, Department of Mineral Engineering, College of Earth and Mineral Sciences, The Pennsylvania State University, University Park
PANG, J
BRICENO, A
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机构:Mineral Processing Section, Department of Mineral Engineering, College of Earth and Mineral Sciences, The Pennsylvania State University, University Park
BRICENO, A
CHANDER, S
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机构:Mineral Processing Section, Department of Mineral Engineering, College of Earth and Mineral Sciences, The Pennsylvania State University, University Park
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Institute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, BelgiumInstitute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, Belgium
Yacoubi, M.El.
Evrard, R.
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Institute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, BelgiumInstitute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, Belgium
Evrard, R.
Nguyen, N.D.
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Institute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, BelgiumInstitute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, Belgium
Nguyen, N.D.
Schmeits, M.
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Institute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, BelgiumInstitute of Physics, B5 University of Liège, B4000 Sart Tilman/Liège 1, Belgium