Analysis of the impedance response due to surface states at the semiconductor/solution interface

被引:16
|
作者
Hoffmann, PM [1 ]
Oskam, G [1 ]
Searson, PC [1 ]
机构
[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
关键词
D O I
10.1063/1.367191
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic surface states at semiconductor/solution interfaces can mediate processes such as trapping and detrapping of majority and minority charge carriers, recombination, or charge transfer to or from the solution. We have calculated the complete impedance response due to these processes using a kinetic approach. Specific cases are discussed and diagnostic parameters for the capacitance and conductance are presented. Experimental results on n-Si(111) in fluoride solutions are used to illustrate the obtained expressions. (C) 1998 American Institute of Physics.
引用
收藏
页码:4309 / 4323
页数:15
相关论文
共 50 条
  • [31] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS
    OLDHAM, WG
    MILNES, AG
    SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165
  • [32] Analysis of interface states in LaSixOy metal-insulator-semiconductor structures
    Inoue, Naoya
    Lichtenwalner, Daniel J.
    Jur, Jesse S.
    Kingon, Angus I.
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A): : 6480 - 6488
  • [33] Analysis of interface states in LaSixOy, metal-insulator-semiconductor structures
    Inoue, Naoya
    Lichtenwalner, Daniel J.
    Jur, Jesse S.
    Kingon, Angus I.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (10 A): : 6480 - 6488
  • [34] OPTOELECTRICAL IMPEDANCE FOR CARTOGRAPHIC CHARACTERIZATION OF SEMICONDUCTOR INSULATOR INTERFACE
    CLECHET, P
    MARTIN, JR
    ROYER, P
    SANDINO, JP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C131 - C131
  • [35] Analysis of rectifying metal-semiconductor interface using impedance spectroscopy at low temperatures
    Kumar, Naveen
    Chand, Subhash
    PHYSICA B-CONDENSED MATTER, 2020, 599
  • [36] SEMICONDUCTOR SURFACE RECONSTRUCTION AND SURFACE STATES
    HARRISON, WA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 324 - 324
  • [37] BASE IMPEDANCE OF A SEMICONDUCTOR DIODE DUE TO DEMBER EFFECT
    ZASED, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (09): : 1161 - &
  • [38] Complex impedance analysis of the glass/solution interface in the glass electrode for pH measurement
    Hwang, TJ
    Han, WT
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 203 : 345 - 352
  • [39] BARRIER FORMATION IN METAL-SEMICONDUCTOR CONTACTS - METAL INDUCED SURFACE AND INTERFACE STATES
    MONCH, W
    SCIENCE OF SUPERCONDUCTIVITY AND NEW MATERIALS, 1989, 18 : 298 - 308
  • [40] IMPEDANCE AT MERCURY/SOLUTION INTERFACE IN GAMMA RADIATION
    MINC, S
    SOBKOWSK.J
    ELECTROCHIMICA ACTA, 1967, 12 (07) : 873 - &