Analysis of the impedance response due to surface states at the semiconductor/solution interface

被引:16
|
作者
Hoffmann, PM [1 ]
Oskam, G [1 ]
Searson, PC [1 ]
机构
[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
关键词
D O I
10.1063/1.367191
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electronic surface states at semiconductor/solution interfaces can mediate processes such as trapping and detrapping of majority and minority charge carriers, recombination, or charge transfer to or from the solution. We have calculated the complete impedance response due to these processes using a kinetic approach. Specific cases are discussed and diagnostic parameters for the capacitance and conductance are presented. Experimental results on n-Si(111) in fluoride solutions are used to illustrate the obtained expressions. (C) 1998 American Institute of Physics.
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页码:4309 / 4323
页数:15
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