Growth and characterisation of Cd1-xMgxSe mixed crystals

被引：17
|
作者：
Firszt, F
Legowski, S
Meczynska, H
Szatkowski, J
Paszkowicz, W
Marczak, M
机构：
[1] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] State Mint, PL-00958 Warsaw, Poland
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
II-VI semiconductors; mixed crystals; photoluminescence; Hall effect;
D O I：
10.1016/S0022-0248(97)00694-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Cd1-xMgxSe mixed crystals for 0 < x < 0.55 have been grown by the high-pressure Bridgman method under an argon overpressure. The dependence of the energy gap, the luminescence and the electrical properties on the Mg concentration has been investigated. Luminescence and transmission spectra show that the band-gap energy is considerably larger than that of "pure" CdSe and for Cd0.45Mg0.55Se we measured about 2.82 eV at T = 40 K. As grown Cd1-xMgxSe solid solutions with x < 0.4 exhibit n-type conductivity and low electrical resistivity (p < 1 Omega cm at room temperature). The maximum of electron concentration 1.3 x 10(18) cm(-3) was obtained for Cd0.85Mg0.15Se. An attempt to explain the dependence of free-carrier concentration on composition by a model of Fermi-level pinning is presented. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1053 / 1056
页数：4
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