Growth and structure of Cd1-xDyxTe crystals

被引:0
|
作者
Sochinskii, Nikolai V. [1 ]
Rubio, Sandra [1 ]
Luis Plaza, Jose [1 ]
Dieguez, Ernesto [1 ]
机构
[1] Univ Autonoma Madrid, Crystal Growth Lab, Dept Mat Phys, Fac Sci, Ciudad Univ Cantoblanco, E-28049 Madrid, Spain
关键词
Surface structure; Bridgman technique; Rare earth compounds; Semiconducting II-VI materials; DILUTED MAGNETIC SEMICONDUCTORS; CDTE; YB; GE;
D O I
10.1016/j.jcrysgro.2016.05.006
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
CdTe crystals doped with dysprosium were grown by the vertical Bridgman method to explore the possibility of obtaining Cd1-xDyxTe ternary compound. The growth was carried out from the Cd1-xDyxTe pre-synthesized feeds with the charge composition in the range of x=0.001-0.05. The as-grown crystals were studied by scanning electron microscopy, X-ray diffraction and optical spectroscopy. Experimental findings testify that the Cd1-xDyxTe crystals have the homogeneous cubic structure similar to CdTe in the narrow composition range of x approximate to 0-0.01. At higher compositions x >= 0.01, the crystals become a mixture of several phases such as CdTe host, Dy2Te3 textures and DyTe-rich inclusions. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 4
页数:4
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