A projection-type excimer-laser crystallization system for ultra-large grain growth of Si thin-films

被引：0

作者：

Oh, CH ^{[1
]}

Nakata, M ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES | 2000年 / 558卷

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using one-and two-dimensional phase-shift masks, we have examined feasibility of the proposed method.

引用

页码：187 / 192

页数：4

共 50 条

[31] Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization
Ishihara, Ryoichi
Rana, Vikas
He, Ming
Hiroshima, Y.
Inoue, S.
Metselaar, Wim
Beenakker, Kees
SOLID-STATE ELECTRONICS, 2008, 52 (03) : 353 - 358
[32] Optimization of phase-modulated excimer-laser annealing method for growing highly-packed large-grains in Si thin-films
Oh, CH
Nakata, M
Matsumura, M
APPLIED SURFACE SCIENCE, 2000, 154 : 105 - 111
[33] A NOVEL DOUBLE-PULSE EXCIMER-LASER CRYSTALISATION METHOD OF SILICON THIN-FILMS
ISHIHARA, R
MATSUMURA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A): : 3976 - 3981
[34] HETEROEPITAXIAL GROWTH OF QUATERNARY BAXSR1-XTIO3 THIN-FILMS BY ARF EXCIMER-LASER ABLATION
KOBAYASHI, H
KOBAYASHI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (4A): : L533 - L536
[35] GROWTH OF FERROELECTRIC OXIDE THIN-FILMS BY EXCIMER LASER ABLATION
KRUPANIDHI, SB
MAFFEI, N
ROY, D
PENG, CJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1815 - 1820
[36] EXCIMER LASER STIMULATED GROWTH OF INP AND GAAS THIN-FILMS
DONNELLY, VM
MCCRARY, VR
APPELBAUM, A
BRASEN, D
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1986, 191 : 22 - COLL
[37] A novel double laser crystallization technique for producing location-controlled ultra-large polysilicon grain growth
Moon, S
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (01) : 133 - 141
[38] Excimer-laser crystallization of patterned Si films at high temperatures via artificially controlled super-lateral growth
Song, HJ
Im, JS
ADVANCED LASER PROCESSING OF MATERIALS - FUNDAMENTALS AND APPLICATIONS, 1996, 397 : 459 - 464
[39] EXCIMER LASER-INDUCED CRYSTALLIZATION AND OXIDATION OF AMORPHOUS CR THIN-FILMS
URSU, I
BIRJEGA, MI
DINESCU, M
MIHAILESCU, IN
POPESCUPOGRION, N
RIBCO, L
PROKHOROV, AM
KONOV, VI
TOKAREV, VN
APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 640 - 647
[40] Excimer-laser crystallization of silicon-carbon films and their thin-film transistor application
Tokyo Inst of Technology, Tokyo, Japan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 3 (1648-1651):

← 1 2 3 4 5 →