A projection-type excimer-laser crystallization system for ultra-large grain growth of Si thin-films

被引：0
|
作者：
Oh, CH [1 ]
Nakata, M [1 ]
Matsumura, M [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan
来源：
FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES | 2000年 / 558卷
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using one-and two-dimensional phase-shift masks, we have examined feasibility of the proposed method.
引用
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页码：187 / 192
页数：4
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