Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor

被引：4

作者：

Sugii, N ^{[1
]}

Nakagawa, K ^{[1
]}

Yamaguchi, S ^{[1
]}

Park, SK ^{[1
]}

Miyao, M ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

THIN SOLID FILMS | 2000年 / 369卷 / 1-2期

关键词：

SiGe; strained Si; heterostructure; molecular-beam epitaxy; modulation-doped field-effect transistor;

D O I：

10.1016/S0040-6090(00)00889-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Modulation-doped SiGe/Si/SiGe heterostructures were grown by molecular-beam epitaxy (MBE), and n-type field-effect transistors were fabricated. Electrons transferred to the strained-Si channel increased the electron density to up to 1 x 10(12) cm(-2) with increasing gale voltage, then excess electrons remained in the SiGe doping layer under a higher gate voltage. A device simulation explained this phenomenon well and suggested that device performance can be improved by increasing the Ge content in the SiGe layer to similar to 0.5. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：362 / 365

页数：4

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