Quantitative SIMS analysis of trace metallic impurities in high purity copper

被引:3
|
作者
Takeshita, HT
Kagawa, T
Suzuki, RO
Oishi, T
Ono, K
机构
[1] Dept. of Ener. Sci. and Engineering, Kyoto University, Kyoto
关键词
secondary ion mass spectrometry; impurity in copper; quantitative analysis; high resolution analysis; isotopic abundance;
D O I
10.2320/jinstmet1952.60.3_290
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Quantitative analysis of trace amounts of dominant impurities in copper, Ag, Fe, Ni and Pb, were studied using secondary ion mass spectrometry (SIMS). Based on the survey of the secondary ions species, which disturbed the detection of atomic ions of impurities, the removal of these disturbance is proposed as the two methods; applying the high resolution of mass spectrometry, and calculating the isotopic abundance. The precision, detection limit and relative sensitivity factor were experimentally discussed to establish the reliable quantitative SIMS analysis at the local area of high purity copper.
引用
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页码:290 / 294
页数:5
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