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- [1] QUANTITATIVE-ANALYSIS OF OXYGEN IN THIN EPITAXIAL LAYERS OF GAAS BY SIMS NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 543 - 546
- [2] QUANTITATIVE-ANALYSIS OF BURIED INTERFACIAL IMPURITY LAYERS BY SIMS AND RBS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3): : 318 - 322
- [3] QUANTITATIVE-ANALYSIS OF ALUMINUM BY SIMS JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1981, 6 (02): : 223 - 239
- [6] QUANTITATIVE-ANALYSIS OF SHALLOW IMPURITIES IN EPITAXIAL LAYERS ON BORON-DOPED SILICON BY PHOTOLUMINESCENCE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (01): : 213 - 222
- [8] SIMS QUANTITATIVE-ANALYSIS OF BERYLLIUM DISTRIBUTION IN THE VICINITY OF AN OXIDATION BOUNDARY JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1979, 4 (02): : 165 - 174
- [9] QUANTITATIVE-ANALYSIS OF SILICON EPITAXIAL LAYERS BY PHOTOLUMINESCENCE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (01): : 221 - 233