Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

被引：17
|
作者：
Lee, Taeyoon [3 ]
Seo, H. [1 ,2 ]
Hwang, H. [1 ,2 ]
Howe, B. [1 ,2 ]
Kodambaka, S. [4 ]
Greene, J. E. [1 ,2 ]
Petrov, I. [1 ,2 ]
机构：
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Univ Illinois, Fredrick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Yonsei Univ, Nano Bio Fus Device Lab, Sch Elect & Elect Engn, Seoul 120749, South Korea
[4] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 18期
关键词：
Epitaxy; Sputter deposition; Transition metal nitrides; MOLECULAR-BEAM EPITAXY; PREFERRED ORIENTATION; GROWTH; POLYCRYSTALLINE; MICROSTRUCTURE; SI; BOMBARDMENT; MORPHOLOGY; SUBSTRATE; INCIDENT;
D O I：
10.1016/j.tsf.2010.04.028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5169 / 5172
页数：4
相关论文
共 39 条
  • [31] THE ROLE OF LOW-ENERGY ION-BOMBARDMENT DURING THE GROWTH OF EPITAXIAL TIN(100) FILMS BY REACTIVE MAGNETRON SPUTTERING - DEFECT FORMATION AND ANNIHILATION
    HULTMAN, L
    HELMERSSON, U
    BARNETT, SA
    SUNDGREN, JE
    GREENE, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2162 - 2164
  • [32] Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3plasma-enhanced atomic layer deposition
    Hirayama, Masaki
    Sugawa, Shigetoshi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (05):
  • [33] Ion-flux characteristics during low-temperature (300 °C) deposition of thermochromic VO2 films using controlled reactive HiPIMS
    Vlcek, Jaroslav
    Kolenaty, David
    Kozak, Tomas
    Houska, Jiri
    Capek, Jiri
    Kos, Simon
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (02)
  • [34] Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film
    Fager, Hanna
    Howe, Brandon M.
    Greczynski, Grzegorz
    Jensen, Jens
    Mei, A. B.
    Lu, Jun
    Hultman, Lars
    Greene, J. E.
    Petrov, Ivan
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (05):
  • [35] Microstructural evolution of Ti 2 ZrHfV 0.5 Mo 0.2 refractory multi-principal alloy under low-energy, high-flux He ion irradiation
    Zhang, Peng
    Zhang, Lisong
    Zhang, Xiaonan
    Li, Na
    Mei, Xianxiu
    Cui, Yunqiu
    Liu, Dongping
    Wang, Younian
    JOURNAL OF NUCLEAR MATERIALS, 2023, 576
  • [36] Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition
    Kiuchi, M. (dd160@ni.aist.go.jp), 1600, American Institute of Physics Inc. (93):
  • [37] Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition
    Liu, C
    Matsutani, T
    Asanuma, T
    Murai, K
    Kiuchi, M
    Alves, E
    Reis, M
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (04) : 2262 - 2266
  • [38] DELTA-FUNCTION-SHAPED SB-DOPING PROFILES IN SI(001) OBTAINED USING A LOW-ENERGY ACCELERATED-ION SOURCE DURING MOLECULAR-BEAM EPITAXY
    NI, WX
    HANSSON, GV
    SUNDGREN, JE
    HULTMAN, L
    WALLENBERG, LR
    YAO, JY
    MARKERT, LC
    GREENE, JE
    PHYSICAL REVIEW B, 1992, 46 (12): : 7551 - 7558
  • [39] ACCELERATED ION-BEAM DOPING DURING SI GROWTH BY MOLECULAR-BEAM EPITAXY AND ION-ENHANCED IN FILM DEPOSITION USING A LOW-ENERGY (40-300 EV) IN ION-SOURCE
    HASAN, MA
    KNALL, J
    BARNETT, SA
    SUNDGREN, JE
    ROCKETT, A
    GREENE, JE
    VACUUM, 1986, 36 (11-12) : 1017 - 1018
1234