Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

被引：17
|
作者：
Lee, Taeyoon [3 ]
Seo, H. [1 ,2 ]
Hwang, H. [1 ,2 ]
Howe, B. [1 ,2 ]
Kodambaka, S. [4 ]
Greene, J. E. [1 ,2 ]
Petrov, I. [1 ,2 ]
机构：
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Univ Illinois, Fredrick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Yonsei Univ, Nano Bio Fus Device Lab, Sch Elect & Elect Engn, Seoul 120749, South Korea
[4] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 18期
关键词：
Epitaxy; Sputter deposition; Transition metal nitrides; MOLECULAR-BEAM EPITAXY; PREFERRED ORIENTATION; GROWTH; POLYCRYSTALLINE; MICROSTRUCTURE; SI; BOMBARDMENT; MORPHOLOGY; SUBSTRATE; INCIDENT;
D O I：
10.1016/j.tsf.2010.04.028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5169 / 5172
页数：4
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