Research on Optically Pumped Vertical-External-Cavity-Surface-Emitting-Semiconductor Laser at 1178

被引:0
|
作者
Ma, Hao-Da [1 ,2 ,3 ]
Zong, Qing-Shuang [4 ]
Bian, Qi [1 ,3 ]
Liu, Hua-Yu [1 ,2 ,3 ]
Zong, Nan [1 ,3 ]
Bo, Yong [1 ,3 ]
Peng, Qin-Jun [1 ,3 ]
机构
[1] Chinese Acad Sci, Tech Inst Phys & Chem TIPC, Key Lab Solid State Laser, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China
[4] Sichuan Univ, Chengdu 610065, Peoples R China
关键词
Semiconductor lasers; pulsed laser; diode-pumped laser; optically pumped vertical external cavity surface emitting semiconductor laser;
D O I
10.1117/12.2587262
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A compact optically pumped vertical-external-cavity surface-emitting-semiconductor laser (OP-VECSEL) at 1178 nm for mu s pulsed operation is reported for the first time. The laser employed a V-shaped resonator with the cavity length of 300 mm, pumped by a 200 mu s pulse 808 nm laser operating at a repetition rate of 1 kHz. The maximum output power about 0.78W was obtained at pump power of similar to 5.9 W. The corresponding conversion efficiency from absorbed pump power to 1178 nm was 13.2%. Further, by the intra-cavity frequency doubling of the VECSEL, a mu s pulsed 589 nm laser has broad prospects in the application of sodium guide stars.
引用
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页数:5
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