Research on Optically Pumped Vertical-External-Cavity-Surface-Emitting-Semiconductor Laser at 1178

被引：0

作者：

Ma, Hao-Da ^{[1
,2
,3
]}

Zong, Qing-Shuang ^{[4
]}

Bian, Qi ^{[1
,3
]}

Liu, Hua-Yu ^{[1
,2
,3
]}

Zong, Nan ^{[1
,3
]}

Bo, Yong ^{[1
,3
]}

Peng, Qin-Jun ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Tech Inst Phys & Chem TIPC, Key Lab Solid State Laser, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China

[4] Sichuan Univ, Chengdu 610065, Peoples R China

来源：

24TH NATIONAL LASER CONFERENCE & FIFTEENTH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS | 2020年 / 11717卷

关键词：

Semiconductor lasers; pulsed laser; diode-pumped laser; optically pumped vertical external cavity surface emitting semiconductor laser;

D O I：

10.1117/12.2587262

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A compact optically pumped vertical-external-cavity surface-emitting-semiconductor laser (OP-VECSEL) at 1178 nm for mu s pulsed operation is reported for the first time. The laser employed a V-shaped resonator with the cavity length of 300 mm, pumped by a 200 mu s pulse 808 nm laser operating at a repetition rate of 1 kHz. The maximum output power about 0.78W was obtained at pump power of similar to 5.9 W. The corresponding conversion efficiency from absorbed pump power to 1178 nm was 13.2%. Further, by the intra-cavity frequency doubling of the VECSEL, a mu s pulsed 589 nm laser has broad prospects in the application of sodium guide stars.

引用

页数：5

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