Scanning Tunneling Microscope and Photoemission Spectroscopy Investigations of Bismuth on Epitaxial Graphene on SiC(0001)

被引：18
|
作者：
Huang, Han [1 ,2 ,3 ]
Wong, Swee Liang [2 ,4 ]
Wang, Yuzhan [2 ]
Sun, Jia-Tao [5 ]
Gao, Xingyu [2 ]
Wee, Andrew Thye Shen [2 ,3 ,4 ]
机构：
[1] Cent S Univ, Inst Super Microstruct & Ultrafast Proc Adv Mat, Sch Phys & Elect, Changsha 410012, Hunan, Peoples R China
[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[3] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore
[4] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore
[5] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2014年 / 118卷 / 43期
关键词：
THIN BI FILMS; ORIENTATION TRANSITION; ELECTRONIC-PROPERTIES; ROOM-TEMPERATURE; SURFACE; GROWTH; GAS; GRAPHITE; LAYERS;
D O I：
10.1021/jp507072p
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011(_)2) 3/4 EG(0001) and Bi(112(_)0) aligned well with EG(112(_)0). Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.
引用
收藏
页码：24995 / 24999
页数：5
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