Fundamental limits to EUV photoresist - art. no. 651911

被引：40
|
作者：
Gallatin, Gregg M.
Naulleau, Patrick
Brainard, Robert
机构：
来源：
Advances in Resist Materials and Processing Technology XXIV | 2007年 / 6519卷
关键词：
D O I：
10.1117/12.712346
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.
引用
收藏
页码：51911 / 51911
页数：10
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