Fundamental limits to EUV photoresist - art. no. 651911

被引：40
|
作者：
Gallatin, Gregg M.
Naulleau, Patrick
Brainard, Robert
机构：
来源：
Advances in Resist Materials and Processing Technology XXIV | 2007年 / 6519卷
关键词：
D O I：
10.1117/12.712346
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.
引用
收藏
页码：51911 / 51911
页数：10
相关论文
共 50 条
  • [21] Resist development to improve flare issue for EUV lithography - art. no. 692310
    Irie, Makiko
    Suzuki, Takako
    Mimura, Takeyoshi
    Iwai, Takeshi
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92310 - 92310
  • [22] Impact of mask absorber properties on printability in EUV lithography - art. no. 673017
    Kamo, Takashi
    Aoyama, Hajime
    Tanaka, Toshihiko
    Suga, Osamu
    PHOTOMASK TECHNOLOGY 2007, PTS 1-3, 2007, 6730 : 73017 - 73017
  • [23] Molecular resists for EUV and EB lithography - art. no. 69231N
    Takemoto, Ichiki
    Ando, Nobuo
    Edamatsu, Kunishige
    Lee, Youngjoon
    Takashima, Masayuki
    Yokoyama, Hiroyuki
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : N9231 - N9231
  • [24] Investigation of resist effects on EUV mask defect printability - art. no. 673016
    Zhang, Zhiyu
    Liang, Ted
    PHOTOMASK TECHNOLOGY 2007, PTS 1-3, 2007, 6730 : 73016 - 73016
  • [25] EUV near normal incidence collector development at SAGEM - art. no. 692135
    Ythier, R. Mercier
    Bozec, X.
    Geyl, R.
    EMERGING LITHOGRAPHIC TECHNOLOGIES XII, PTS 1 AND 2, 2008, 6921 : 92135 - 92135
  • [26] Plasma Sn cleaning integrated in EUV source system - art. no. 692132
    Shin, H.
    Raju, R.
    Ruzie, D. N.
    EMERGING LITHOGRAPHIC TECHNOLOGIES XII, PTS 1 AND 2, 2008, 6921 : 92132 - 92132
  • [27] Limits on anomalous WWγ and WWZ couplings -: art. no. 031102
    Abbott, B
    Abolins, M
    Acharya, BS
    Adam, I
    Adams, DL
    Adams, M
    Ahn, S
    Aihara, H
    Alves, GA
    Amos, N
    Anderson, EW
    Astur, R
    Baarmand, MM
    Babukhadia, L
    Baden, A
    Balamurali, V
    Balderston, J
    Baldin, B
    Banerjee, S
    Bantly, J
    Barberis, E
    Bartlett, JF
    Belyaev, A
    Beri, SB
    Bertram, I
    Bezzubov, VA
    Bhat, PC
    Bhatnagar, V
    Bhattacharjee, M
    Biswas, N
    Blazey, G
    Blessing, S
    Bloom, P
    Boehnlein, A
    Bojko, NI
    Borcherding, F
    Boswell, C
    Brandt, A
    Brock, R
    Bross, A
    Buchholz, D
    Burtovoi, VS
    Butler, JM
    Carvalho, W
    Casey, D
    Casilum, Z
    Castilla-Valdez, H
    Chakraborty, D
    Chang, SM
    Chekulaev, SV
    PHYSICAL REVIEW D, 1998, 58 (03):
  • [28] Experimental limits on the width of the reported Θ(1540)+ -: art. no. 011501
    Cahn, RN
    Trilling, GH
    PHYSICAL REVIEW D, 2004, 69 (01):
  • [29] Electroweak limits on nonuniversal Z′ bosons -: art. no. 015006
    Chivukula, RS
    Simmons, EH
    PHYSICAL REVIEW D, 2002, 66 (01)
  • [30] Images in photoresist for self-interferometric electrical image monitors - art. no. 673039
    Rubinstein, Juliet
    Neureuther, Andrew R.
    PHOTOMASK TECHNOLOGY 2007, PTS 1-3, 2007, 6730 : 73039 - 73039
12345