Fundamental limits to EUV photoresist - art. no. 651911

被引：40
|
作者：
Gallatin, Gregg M.
Naulleau, Patrick
Brainard, Robert
机构：
来源：
Advances in Resist Materials and Processing Technology XXIV | 2007年 / 6519卷
关键词：
D O I：
10.1117/12.712346
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.
引用
收藏
页码：51911 / 51911
页数：10
相关论文
共 50 条
  • [1] Quantum calculations of the dispersion of the fundamental limits of nonlinear susceptibilities - art. no. 633103
    Kuzyk, Mark G.
    Linear and Nonlinear Optics of Organic Materials VI, 2006, 6331 : 33103 - 33103
  • [2] Fundamental limits to wavefront sensing in the submillimeter - art. no. 62750Z
    Serabyn, E.
    Millimeter and Submillimeter Detectors and Instrumentation for Astronomy III, 2006, 6275 : Z2750 - Z2750
  • [3] EUV resist development in Selete - art. no. 692313
    Kawamura, Daisuke
    Kaneyama, Koji
    Kobayashi, Shinji
    Santillan, Julius Joseph
    Itani, Toshiro
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92313 - 92313
  • [4] New limits on the drift of fundamental constants from laboratory measurements -: art. no. 230802
    Fischer, M
    Kolachevsky, N
    Zimmermann, M
    Holzwarth, R
    Udem, T
    Hänsch, TW
    Abgrall, M
    Grünert, J
    Maksimovic, I
    Bize, S
    Marion, H
    Dos Santos, FP
    Lemonde, P
    Santarelli, G
    Laurent, P
    Clairon, A
    Salomon, C
    Haas, M
    Jentschura, UD
    Keitel, CH
    PHYSICAL REVIEW LETTERS, 2004, 92 (23) : 230802 - 1
  • [5] A covariance analysis tool for assessing fundamental limits of SIM pointing performance - art. no. 667508
    Bayard, David S.
    Kang, Bryan H.
    OPTICAL MODELING AND PERFORMANCE PREDICTIONS III, 2007, 6675 : 67508 - 67508
  • [6] EUV resist outgassing analysis in selete - art. no. 692342
    Santillan, Julius Joseph
    Kobayashi, Shinji
    Itani, Toshiro
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92342 - 92342
  • [7] Quantitative analysis of EUV resist outgassing - art. no. 692345
    Kobayashi, Shinji
    Santillan, Julius Joseph
    Itani, Toshiro
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923 : 92345 - 92345
  • [8] Vacuum induced photoresist outgassing - art. no. 69213K
    Waterman, Justin
    Mbanaso, Chimaobi
    Denbeaux, Gregory
    EMERGING LITHOGRAPHIC TECHNOLOGIES XII, PTS 1 AND 2, 2008, 6921 : K9213 - K9213
  • [9] Fundamental limit of ebeam lithography - art. no. 660724
    Cheng, Wen-Hao
    Farnsworth, Jeff
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XIV, PTS 1 AND 2, 2007, 6607 : 60724 - 60724
  • [10] Constraints on the variations of the fundamental couplings -: art. no. 045022
    Olive, KA
    Pospelov, M
    Qian, YZ
    Coc, A
    Cassé, M
    Vangioni-Flam, E
    PHYSICAL REVIEW D, 2002, 66 (04):
12345