Technology and design of GaN power devices

被引：0

作者：

Moens, P. ^{[1
]}

Banerjee, A. ^{[1
]}

Coppens, P. ^{[1
]}

Constant, A. ^{[1
]}

Vanmeerbeek, P. ^{[1
]}

Li, Z. ^{[1
]}

Declercq, F. ^{[1
]}

De Schepper, L. ^{[1
]}

De Vleeschouwer, H. ^{[1
]}

Liu, C.

Padmanabhan, B.

Jeon, W.

Guo, J.

Salih, A.

Tack, M. ^{[1
]}

机构：

[1] ON Semicond, Oudenaarde, Belgium

来源：

ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2015年

关键词：

AlGaN/GaN; HEMT; Carbon; Dynamic Ron; off-state leakage; intrinsic reliability; TDDB; HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (<10nA/mm). Due to the reduction of buffer trapping, low dynamic Ron (<10%) is obtained, both at room temperature and at high temperature.

引用

页码：64 / 67

页数：4

共 50 条

[41] Present and future of GaN power devices and their applications
Ueda, Daisuke
[J]. GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, 9363
[42] GaN on Si Technologies for Power Switching Devices
Ishida, Masahiro
Ueda, Tetsuzo
Tanaka, Tsuyoshi
Ueda, Daisuke
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3053 - 3059
[43] Extremely High-Power GaN Devices
Hindle, Patrick
[J]. MICROWAVE JOURNAL, 2019, 62 (09) : 20 - 32
[44] Thermal management of lateral GaN power devices
Yu, Chenjiang
Laboure, Eric
Buttay, Cyril
[J]. 2015 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP), 2015, : 40 - 43
[45] AlInN/GaN diodes for power electronic devices
Peart, Matthew R.
Borovac, Damir
Sun, Wei
Song, Renbo
Tansu, Nelson
Wierer, Jonathan J., Jr.
[J]. APPLIED PHYSICS EXPRESS, 2020, 13 (09)
[46] High-power GaN electronic devices
Zhang, AP
Ren, F
Anderson, TJ
Abernathy, CR
Singh, RK
Holloway, PH
Pearton, SJ
Palmer, D
[J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2002, 27 (01) : 1 - 71
[47] GaN based heterostructure for high power devices
Khan, MA
Chen, Q
Shur, MS
Dermott, BT
Higgins, JA
Burm, J
Schaff, WJ
Eastman, LF
[J]. SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1555 - 1559
[48] Interleaved Flyback Converter with GaN Power Devices
Wang, Guan-shiun
Liang, Tsorng-Juu
Lai, Jian-Hao
[J]. 2018 IEEE INTERNATIONAL POWER ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC), 2018, : 372 - 377
[49] Establishing the reliability lifecycle of GaN power devices
[J]. 2017, Hearst Business Communications (59):
[50] Recent Progress in SiC and GaN Power Devices
Sheng, Kuang
Yang, Shu
Guo, Qing
Xu, Hongyi
[J]. GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, 2017, 80 (07): : 37 - 51

← 1 2 3 4 5 →