Technology and design of GaN power devices

被引：0

作者：

Moens, P. ^{[1
]}

Banerjee, A. ^{[1
]}

Coppens, P. ^{[1
]}

Constant, A. ^{[1
]}

Vanmeerbeek, P. ^{[1
]}

Li, Z. ^{[1
]}

Declercq, F. ^{[1
]}

De Schepper, L. ^{[1
]}

De Vleeschouwer, H. ^{[1
]}

Liu, C.

Padmanabhan, B.

Jeon, W.

Guo, J.

Salih, A.

Tack, M. ^{[1
]}

机构：

[1] ON Semicond, Oudenaarde, Belgium

来源：

ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2015年

关键词：

AlGaN/GaN; HEMT; Carbon; Dynamic Ron; off-state leakage; intrinsic reliability; TDDB; HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (<10nA/mm). Due to the reduction of buffer trapping, low dynamic Ron (<10%) is obtained, both at room temperature and at high temperature.

引用

页码：64 / 67

页数：4

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