EVALUATION OF GAN TECHNOLOGY IN POWER AMPLIFIER DESIGN

被引：16
|
作者：
Colantonio, Paolo [1 ]
Giannini, Franco [1 ]
Giofre, Rocco [1 ]
Piazzon, Luca [1 ]
机构：
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 01期
关键词：
power amplifier; GaN HEMT;
D O I：
10.1002/mop.23958
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this contribution the features of GaN technology for power applications will be explored,from the designer point of view. Therefore, the active device will be studied as a block box using its simplified model and putting in evidence the role of its key parameters such as the knee voltage, the breakdown voltage, etc. At the end, the experimental results of several power amplifiers designed using different strategies will be presented to highlight both, the capabilities and/or drawbacks of such material. (C) 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 42-44, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23958
引用
收藏
页码：42 / 44
页数：3
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