Efficiency Enhancement for Distributed Power Amplifier Design with GaN HEMT Technology

被引：0
|
作者：
Yan, Huan Hui [1 ]
Narendra, Kumar [1 ]
Latef, T. A. [1 ]
机构：
[1] Univ Malaya, Dept Elect Engn, Kuala Lumpur 50603, Malaysia
来源：
2016 IEEE ASIA-PACIFIC CONFERENCE ON APPLIED ELECTROMAGNETICS (APACE) | 2016年
关键词：
Distributed Power Amplifier; Distributed Amplifier; Efficiency; GaN HEMT; Gate Termination Adjustment Network; Drain Line Tapering; BAND;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the new design of distributed amplifier (DA) with control mechanism to enhance the efficiency performance by tuning the impedance at the gate termination adjustment network and applying drain line tapering topology. This distributed power amplifier (DPA) system is design based on the GaN high electron mobility (HEMT) transistor and simulated by using Advanced System Design tool (ADS). The detail of the design has demonstrated and achieved an output power of similar to 40 dBm, flat gain at 10 dB, and bandwidth covering 100MHz to 2.4 GHz, with power added efficiency (PAE) of similar to 40 %. As a result, this work has demonstrating significant improvement in efficiency over the conventional DA and offers wide band operation for public safety applications.
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页数：3
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