Gain characteristics of InGaN-GaN quantum wells

被引：10
|
作者：
Jiang, HT [1 ]
Singh, J [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2000年 / 36卷 / 09期
关键词：
gain spectrum; GaN; quantum-well lasers; piezoelectricity; semiconductor device modeling;
D O I：
10.1109/3.863958
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A self-consistent approach is used to examine gain and radiative lifetimes in InGaN-GaN quantum-well structures. The effect of high built-in electric fields due to spontaneous polarization and the piezoelectric effect and the screening of these fields by carrier injection is examined. We study how the peak gain and radiative lifetime vary with injection density and well size. We also examine the blue shift in the peak gain energy with carrier injection. Implications for laser design are discussed.
引用
收藏
页码：1058 / 1064
页数：7
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