Stimulated emission in InGaN/GaN quantum wells

被引：0
|
作者：
Jursenas, S
Miasojedovas, S
Kurilcik, N
Kurilcik, G
Zukauskas, A
Yang, J
Khan, MA
Shur, MS
Gaska, R
机构：
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2006 Vilnius, Lithuania
[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[3] Sensor Elect Technol Inc, Latham, NY 12110 USA
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001 | 2002年 / 384-3卷
关键词：
InGaN/GaN; quantum wells; luminescence; optical gain;
D O I：
10.4028/www.scientific.net/MSF.384-385.265
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The origin of the luminescence of InGaN/GaN multiple quantum-wells has been studied at high optical excitation by means of time-resolved luminescence technique combined with the variable-stripe method. Spontaneous transitions from localized states and stimulated emission of free carriers both from the quantum well and the barrier or buffer layers have been identified. The estimated room-temperature optical gain coefficient of 8000 cm(-1) was found to be close to the theoretical value.
引用
收藏
页码：265 / 268
页数：4
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