Synthesis of ultrananocrystalline diamond films by microwave plasma-assisted chemical vapor deposition

被引：0
|
作者：
Tran, Dzung T.
Huang, Wen-Shin
Asmussen, Jes
Grotjohn, Timothy A.
Reinhard, Donnie K.
机构：
[1] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
[2] Michigan State Univ, Ctr Coatings & Laser Appl, Fraunhofer USA, E Lansing, MI 48824 USA
来源：
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY | 2006年 / 16卷 / 06期
关键词：
ultrananocrystalline diamond; diamond synthesis; microwave plasma processing;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we report on the development of process methods and apparatus that enable the deposition of ultrananocrystalline diamond (UNCD) films over a wide pressure range (60-240 Torr) and temperature range (400-800 degrees C). The films are deposited using a microwave plasma-assisted chemical vapor deposition (MPCVD) system operating at 2.45 GHz with variable power and pressure. The influence of various input parameters such as feed gas mixture, pressure, and substrate temperature on the growth rate and surface morphology/roughness of the UNCD diamond films is investigated. Feed gas mixtures studied include argon-methane-hydrogen, helium-methane-hydrogen and argon-methane-nitrogen. Experimental data are reported for the growth rate, crystal size distribution, surface roughness, Young's modulus, and electrical conductivity.
引用
收藏
页码：281 / 294
页数：14
相关论文
共 50 条
  • [11] Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films
    A. L. Vikharev
    A. M. Gorbachev
    A. B. Muchnikov
    D. B. Radishchev
    Radiophysics and Quantum Electronics, 2007, 50 : 913 - 921
  • [12] STUDY OF MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION OF POLY- AND SINGLE-CRYSTALLINE DIAMOND FILMS
    Vikharev, A. L.
    Gorbachev, A. M.
    Muchnikov, A. B.
    Radishchev, D. B.
    RADIOPHYSICS AND QUANTUM ELECTRONICS, 2007, 50 (10-11) : 913 - 921
  • [13] Synthesis of carbon tubes using microwave plasma-assisted chemical vapor deposition
    Zhang, Q
    Yoon, SF
    Ahn, J
    Gan, B
    Rusli
    Yu, MB
    JOURNAL OF MATERIALS RESEARCH, 2000, 15 (08) : 1749 - 1753
  • [14] Synthesis of carbon tubes using microwave plasma-assisted chemical vapor deposition
    Qing Zhang
    S. F. Yoon
    J. Ahn
    Bo Gan Rusli
    Ming-Bin Yu
    Journal of Materials Research, 2000, 15 : 1749 - 1753
  • [15] Pulsed microwave plasma-assisted chemical vapour deposition of diamond
    Laimer, J
    Matsumoto, S
    INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, 1996, 14 (1-3): : 179 - 184
  • [16] Microwave plasma-assisted chemical vapor deposition for growing diamondss
    Bénédic, F
    Bougdira, J
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 2001, 56 (300): : 307 - +
  • [17] Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition
    Nishitani-Gamo, M
    Xiao, CY
    Zhang, YF
    Yasu, E
    Kikuchi, Y
    Sakaguchi, I
    Suzuki, T
    Sato, Y
    Ando, T
    THIN SOLID FILMS, 2001, 382 (1-2) : 113 - 123
  • [18] Growth of three-dimensional diamond mosaics by microwave plasma-assisted chemical vapor deposition
    Shu, G.
    Dai, B.
    Ralchenko, V. G.
    Bolshakov, A. P.
    Khomich, A. A.
    Ashkinazi, E. E.
    Han, J.
    Zhu, J.
    CRYSTENGCOMM, 2018, 20 (02) : 198 - 203
  • [19] Epitaxial growth of diamond on an iridium (100) substrate by microwave plasma-assisted chemical vapor deposition
    Tsubota, T
    Tsuruga, S
    Saito, T
    Kusakabe, K
    Morooka, S
    Maeda, H
    PROPERTIES AND PROCESSING OF VAPOR-DEPOSITED COATINGS, 1999, 555 : 333 - 338
  • [20] ELECTROSTATIC-PROBE MEASUREMENTS FOR MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF DIAMOND
    CERIO, FM
    WEIMER, WA
    APPLIED PHYSICS LETTERS, 1991, 59 (26) : 3387 - 3389
12345