An efficient surface potential solution algorithm for compact MOSFET models

被引：24

作者：

Rios, R ^{[1
]}

Mudanai, S ^{[1
]}

Shih, WK ^{[1
]}

Packan, P ^{[1
]}

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface potential-based compact MOSFET models intended for circuit simulations are becoming mainstream. A critical building block for developing such models is a fast and accurate solution of the implicit surface potential equation. Here, we present a robust algorithm for the surface potential solution, with efficiency comparable to recently proposed analytic approximations and without any compromise in accuracy.

引用

页码：755 / 758

页数：4

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