An efficient surface potential solution algorithm for compact MOSFET models

被引：24
|
作者：
Rios, R [1 ]
Mudanai, S [1 ]
Shih, WK [1 ]
Packan, P [1 ]
机构：
[1] Intel Corp, Hillsboro, OR 97124 USA
来源：
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年
关键词：
D O I：
10.1109/IEDM.2004.1419282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface potential-based compact MOSFET models intended for circuit simulations are becoming mainstream. A critical building block for developing such models is a fast and accurate solution of the implicit surface potential equation. Here, we present a robust algorithm for the surface potential solution, with efficiency comparable to recently proposed analytic approximations and without any compromise in accuracy.
引用
收藏
页码：755 / 758
页数：4
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