A comparative study of bulk InGaAs and InGaAs/InGaAs strain-compensated Quantum Well Cells for thermophotovoltaic applications

被引：3

作者：

Abbott, P ^{[1
]}

Rohr, C ^{[1
]}

Connolly, JP ^{[1
]}

Ballard, I ^{[1
]}

Barnham, KWJ ^{[1
]}

Ginige, R ^{[1
]}

Corbett, B ^{[1
]}

Clarke, G ^{[1
]}

Bland, SW ^{[1
]}

Mazzer, M ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, EXSS Phys, London SW7 2BW, England

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190788

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

One of the main requirements for thermophotovoltaic (TPV) systems powered by fuel combustion is a low level of pollution. To achieve this, low combustion temperatures are needed. The most efficient narrow band emitters emit at long wavelengths, necessitating low band gap cells. Erbium oxide emits around 1500nm and we report an InGaAs p-n cell which is well matched to this spectrum. Two more suitable emitters are thulium oxide and holmium oxide, which emit around 1700nm and 1950nm respectively, beyond the band gap of lattice matched InGaAs. To absorb this emission, lattice mismatched materials must be used. The technique of strain compensation can prevent the creation of dislocations within the structure. We present results of a strain-compensated InGaAs/InGaAs Quantum Well Cell (QWC) which demonstrates the success of this structure in allowing wavelength response to be extended whilst displaying a lower dark current.

引用

页码：1058 / 1061

页数：4

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