Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface

被引：1
|
作者：
Fujimura, N
Yamaguchi, T
Kato, H
Ito, T
机构：
[1] Univ Osaka Prefecture, Coll Engn, Dept Appl Mat Sci, Sakai, Osaka 5998531, Japan
[2] Matsushita Elect Corp, Semicond Co, ULSI Proc Technol Dev Ctr, Kyoto 6018413, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 159卷
关键词：
reactive ion etching; plasma-induced damage; Schottky barrier height; Ti/Si interface;
D O I：
10.1016/S0169-4332(00)00069-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Change in Schottky barrier height (SBH) of Ti/Si surface damaged by CHF3/O-2 plasma treatment was investigated as a function of annealing temperature. SBH of the damaged interface was initially higher than that of clean interface. The SBH of damaged interface increased with increasing the annealing temperature up to 400 degrees C, while SBH of the samples without damage did not change. It was found that the increase in SBH was due to the formation of Ti5Si3 under the influence of the plasma-induced damage. At the annealing temperature of 600 degrees C, the SBH values of damaged and undamaged interfaces became almost identical due to C49 TiSi2 formation. (C) 2000 Published by Elsevier Science B.V.
引用
收藏
页码：186 / 190
页数：5
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