Impact of Thermal Treatments on the Schottky Barrier Height Reduction at the Ti-TiOx-Si Interface for Contact Resistance

被引：0

作者：

Lee, Albert ^{[1
]}

Pethe, Abhijit ^{[1
]}

Joshi, Amol ^{[1
]}

Bouche, Guillaume ^{[2
]}

Koh, Shaoming ^{[2
]}

Nimii, Hiroaki ^{[3
]}

Mujumdar, Salil ^{[1
]}

Hong, Zhendong ^{[1
]}

Fuchigami, Nobi ^{[1
]}

Lim, Ira ^{[1
]}

Bodke, Ashish ^{[1
]}

Raymond, Mark ^{[3
]}

Besser, Paul ^{[4
]}

Barstow, Sean ^{[1
]}

机构：

[1] Intermolecular, San Jose, CA 95134 USA

[2] GLOBALFOUNDRIES, Malta, NY, Malta

[3] GLOBALFOUNDRIES, Albany, NY USA

[4] GLOBALFOUNDRIES, Santa Clara, CA USA

来源：

2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2014年

关键词：

MIS; contact; SBH; unpinning; resistance; Ti;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-Insulator-Semiconductor (MIS) Schottky diodes were fabricated to study Fermi level unpinning by use of a thin TiOx insulator. For Ti-TiOx-n-Si junctions, the Schottky barrier height (SBH) was pinned due to O diffusion from TiOx into Ti during thermal anneals, as observed from XPS depth profiles. A thin AlOx barrier inserted between the Ti and the TiOx prevented O diffusion from TiOx into Ti, allowing SBH unpinning to be maintained after 450 degrees C anneals.

引用

页数：2

共 50 条

[1] Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact
Deng, Yunsheng
He, Dongsheng
Qiu, Yang
Gu, Rui
He, Jiaqing
Nakatsuka, Osamu
APPLIED PHYSICS LETTERS, 2018, 113 (25)
[2] Schottky Barrier Height Tuning using P+ DSS for NMOS Contact Resistance Reduction
Khaja, Fareen Adeni
Rao, K. V.
Ni, Chi-Nung
Muthukrishnan, Shankar
Lei, Jianxin
Darlark, Andrew
Peidous, Igor
Brand, Adam
Henry, Todd
Variam, Naushad
ION IMPLANTATION TECHNOLOGY 2012, 2012, 1496 : 42 - 45
[3] Influence of reactive ion etching damage on the Schottky barrier height of Ti/p-Si interface
Fujimura, N
Yamaguchi, T
Kato, H
Ito, T
APPLIED SURFACE SCIENCE, 2000, 159 : 186 - 190
[4] Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction
Yeo, Yee-Chia
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2010, 28 (01): : 91 - 102
[5] Modification of Al/Si interface and Schottky barrier height with chemical treatment
Horváth, ZJ
Adám, M
Szabó, I
Serényi, M
Van Tuyen, V
APPLIED SURFACE SCIENCE, 2002, 190 (1-4) : 441 - 444
[6] Effective Schottky Barrier height reduction using Sulfur or Selenium at the NiSi/n-Si(100) interface for low resistance contacts
Wong, Hoong-Shing
Chan, Lap
Samudra, Ganesh
Yeo, Yee-Chia
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) : 1102 - 1104
[7] Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation
Courtin, Jules
Moreac, Alain
Delhaye, Gabriel
Lepine, Bruno
Tricot, Sylvain
Turban, Pascal
Schieffer, Philippe
Le Breton, Jean-Christophe
APPLIED SCIENCES-BASEL, 2019, 9 (23):
[8] SCHOTTKY-BARRIER AND CONTACT RESISTANCE AT A NIOBIUM SILICON INTERFACE
HESLINGA, DR
KLAPWIJK, TM
APPLIED PHYSICS LETTERS, 1989, 54 (11) : 1048 - 1050
[9] Impact of Si+ implantation on reduction of contact resistance in Ti/Al contact to GaN
Satoh, M.
Itoh, N.
Nomoto, K.
Nakamura, T.
Mishima, T.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2621 - +
[10] Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer
Guo, Xiao
Tang, Yang
Jiang, Yu-Long
Qu, Xin-Ping
Ru, Guo-Ping
Zhang, David Wei
Deduytsche, Davy
Detavernier, Christophe
MICROELECTRONIC ENGINEERING, 2013, 106 : 121 - 124

← 1 2 3 4 5 →