Impact of Thermal Treatments on the Schottky Barrier Height Reduction at the Ti-TiOx-Si Interface for Contact Resistance

被引：0

作者：

Lee, Albert ^{[1
]}

Pethe, Abhijit ^{[1
]}

Joshi, Amol ^{[1
]}

Bouche, Guillaume ^{[2
]}

Koh, Shaoming ^{[2
]}

Nimii, Hiroaki ^{[3
]}

Mujumdar, Salil ^{[1
]}

Hong, Zhendong ^{[1
]}

Fuchigami, Nobi ^{[1
]}

Lim, Ira ^{[1
]}

Bodke, Ashish ^{[1
]}

Raymond, Mark ^{[3
]}

Besser, Paul ^{[4
]}

Barstow, Sean ^{[1
]}

机构：

[1] Intermolecular, San Jose, CA 95134 USA

[2] GLOBALFOUNDRIES, Malta, NY, Malta

[3] GLOBALFOUNDRIES, Albany, NY USA

[4] GLOBALFOUNDRIES, Santa Clara, CA USA

来源：

2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2014年

关键词：

MIS; contact; SBH; unpinning; resistance; Ti;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-Insulator-Semiconductor (MIS) Schottky diodes were fabricated to study Fermi level unpinning by use of a thin TiOx insulator. For Ti-TiOx-n-Si junctions, the Schottky barrier height (SBH) was pinned due to O diffusion from TiOx into Ti during thermal anneals, as observed from XPS depth profiles. A thin AlOx barrier inserted between the Ti and the TiOx prevented O diffusion from TiOx into Ti, allowing SBH unpinning to be maintained after 450 degrees C anneals.

引用

页数：2

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