Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor

被引：10

作者：

Tsai, Jung-Hui ^{[1
]}

Lee, Yuan-Hong ^{[1
]}

Dale, Ning-Feng ^{[1
]}

Sheng, Jhih-Syuan ^{[1
]}

Ma, Yung-Chun ^{[1
]}

Ye, Sheng-Shiun ^{[1
]}

机构：

[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 06期

关键词：

bipolar transistors; energy gap; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; semiconductor superlattices; tunnelling; HBTS;

D O I：

10.1063/1.3302462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of an InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure is demonstrated by experimental results. The injecting electrons from superlattice emitter are easy to transport into the superlattice-base region for promoting the collector current by tunneling behavior. Furthermore, the average energy gap of base regime is substantially reduced by the use of InGaAs/GaAs superlattice structure for the requirement of low turn-on voltage. Experimentally, the transistor exhibits a maximum common-emitter current gain of 295 and a relatively low collector-emitter offset voltage of only 16 mV. In particular, the ideality factor of collector current near to unity is obtained.

引用

页数：3

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