Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

被引：1
|
作者：
Cheng, SY
Chang, WL
Liu, WC
Lin, W
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Chungwa Telecom Co Ltd, Telecommun Labs, Integrated Optoelect Appl Res Lab, Yang Mei, Taiwan
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1997年 / 22卷 / 04期
关键词：
superlattice; resonant-tunneling; transistor;
D O I：
10.1006/spmi.1997.0465
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new bipolar transistor with a 20-period i-AlInAs/n(+)-InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effect within the 20-period superlattice near emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed under normal operation. A transistor action with a common-emitter current gain of 13 and a small offset voltage (similar to 90 mV) is achieved at room temperature. (C) 1997 Academic Press Limited.
引用
收藏
页码：541 / 549
页数：9
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