Scale Invariance of the Structure upon Explosive Crystallization of Amorphous Films

被引:0
|
作者
Kveglis, L., I [1 ]
Abylkalykova, R. B. [1 ]
Zhigalov, V. S. [1 ]
Musikhin, V. A. [1 ]
机构
[1] Siberian Fed Univ, Krasnoyarsk 660041, Russia
关键词
dissipative structures; explosive crystallization; bend contours; quantum dots;
D O I
暂无
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
In the last few years an interest in field of quantum dots devices creating has been increased. In this work the nanocrystallite with Frank-Kasper structure was examined as the quantum dot in amorphous film. An ability to create all-inorganic Quantum Dots Light Emission Device may be considered for Tb30Fe70, Co80C20 and Co50Pd50 films. The self-organisation of atomic structure in Tb30Fe70, Co80C20 and Co50Pd50 films, which possess large values of perpendicular magnetic anisotropy (PMA) constant (K-perpendicular to similar to 10(6) erg/cm(3)), were investigated by methods of electron diffraction and transmission electron microscopy, including the method of bend contours([1]). The crystallization of the films proceeds in an explosive way forming different dissipative structures from initial nanocrystalline state. In previous works([2,3]) it was shown that after crystallization (T-ann similar to 260-330 degrees C) the atomic structures of Tb30Fe70 Co80C20 and Co50Pd50 films are tetrahedrally close-packed Frank-Kasper structures. In this work the structural model of thin film at mezoscale and its correlation with magnetic and optical properties is proposed.
引用
收藏
页码:17 / 19
页数:3
相关论文
共 50 条
  • [21] EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-GERMANIUM
    LEAMY, HJ
    BROWN, WL
    CELLER, GK
    FOTI, G
    GILMER, GH
    FAN, JCC
    APPLIED PHYSICS LETTERS, 1981, 38 (03) : 137 - 139
  • [22] Crystallization of amorphous titanium oxide films upon annealing in an oxygen atmosphere
    Bulyarskiy, Sergey, V
    Koiva, Daria A.
    Gusarov, Georgy G.
    Latipov, Egor, V
    Rudakov, Grigory A.
    Svetukhin, Vyacheslav V.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2022, 283
  • [23] Shifting of the thermal properties of amorphous germanium films upon relaxation and crystallization
    Szyszko, W., 1600, Springer-Verlag GmbH & Company KG, Berlin, Germany (61):
  • [24] BETWEEN EXPLOSIVE CRYSTALLIZATION AND AMORPHOUS REGROWTH - INHOMOGENEOUS SOLIDIFICATION UPON PULSED-LASER ANNEALING OF AMORPHOUS-SILICON
    BRUINES, JJP
    VANHAL, RPM
    KOEK, BH
    VIEGERS, MPA
    BOOTS, HMJ
    APPLIED PHYSICS LETTERS, 1987, 50 (09) : 507 - 509
  • [25] ELECTRON BEAM INDUCED EXPLOSIVE CRYSTALLIZATION OF UNSUPPORTED AMORPHOUS GERMANIUM THIN FILMS.
    Sharma, R.K.
    Bansal, S.K.
    Nath, R.
    Mehra, R.M.
    Bahadur, Kanwar
    Mall, R.P.
    Chaudhary, K.L.
    Garg, C.L.
    1600, (55):
  • [26] TRIGGERING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON
    POLMAN, A
    ROORDA, S
    STOLK, PA
    SINKE, WC
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) : 114 - 120
  • [27] EPITAXIAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON
    POLMAN, A
    MOUS, DJW
    STOLK, PA
    SINKE, WC
    BULLELIEUWMA, CWT
    VANDENHOUDT, DEW
    APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1097 - 1099
  • [28] Recrystallization mechanism of amorphous silicon thin films upon excimer laser crystallization
    Kuo, Chil-Chyuan
    Yeh, Wen-Chang
    Hsiao, Chih-Ping
    Jeng, Jeng-Ywan
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (07): : 2023 - 2029
  • [29] Recrystallization mechanism of amorphous silicon thin films upon excimer laser crystallization
    Kuo, Chil-Chyuan
    Yeh, Wen-Chang
    Hsiao, Chih-Ping
    Jeng, Jeng-Ywan
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2007, 1 (01): : 25 - 30
  • [30] Explosive crystallization of Ge thin films
    Schaefer, M.
    Vide, les Couches Minces, 1991, (259 Supp):