TRIGGERING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：7
|
作者：
POLMAN, A [1 ]
ROORDA, S [1 ]
STOLK, PA [1 ]
SINKE, WC [1 ]
机构：
[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 108卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(91)90359-D
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The initial stages of explosive crystallization (EC) of amorphous Si (a-Si) are investigated. A thin layer of liquid Si (l-Si), highly undercooled with respect to crystalline Si (c-Si) is formed by nanosecond pulsed ruby laser irradiation of a-Si prepared by ion implantation. Time-resolved reflectivity measurements are used to determine the time delay in the onset of EC for different surface structures. If a thin single crystal layer of Si covers the a-Si, EC proceeds immediately. In the absence of a seed for EC, a maximum time delay of 11+/-2 ns is observed. Intermediate delay times are found if the surface layer contains small c-Si clusters.
引用
收藏
页码：114 / 120
页数：7
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