GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

被引：9
|
作者：
Ma, B. S. [1 ]
Fan, W. J.
Dang, Y. X.
Cheah, W. K.
Loke, W. K.
Liu, W.
Li, D. S.
Yoon, S. F.
Zhang, D. H.
Wang, H.
Tung, C. H.
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期
关键词：
D O I：
10.1063/1.2767185
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at similar to 1.2 eV. After annealing at 650 degrees C, a large blueshift of 40 meV was observed. The photocurrent peak at 1.24 mu m is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band k center dot p calculations agree with the above observations. (c) 2007 American Institute of Physics.
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页数：3
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