AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K

被引：0
|
作者：
Lee, Jung Hee
Chiang, Jung-Chi
Li, Sheng S.
Kannam, P.J.
机构：
来源：
Applied Physics Letters | 1999年 / 74卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K
    Lee, JH
    Chiang, JC
    Li, SS
    Kannam, PJ
    APPLIED PHYSICS LETTERS, 1999, 74 (05) : 765 - 767
  • [2] An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 205 K and 3.4 μm
    Lee, JH
    Chiang, JC
    Li, SS
    Kannam, PJ
    PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON LONG WAVELENGTH INFRARED DETECTORS AND ARRAYS: PHYSICS AND APPLICATIONS, 1999, 98 (21): : 188 - 193
  • [3] GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm
    Ma, B. S.
    Fan, W. J.
    Dang, Y. X.
    Cheah, W. K.
    Loke, W. K.
    Liu, W.
    Li, D. S.
    Yoon, S. F.
    Zhang, D. H.
    Wang, H.
    Tung, C. H.
    APPLIED PHYSICS LETTERS, 2007, 91 (05)
  • [4] Tunneling magnetoresistance in GaMnAs/AlAs/InGaAs/AlAs/GaMnAs double-barrier magnetic tunnel junctions
    Ohya, S
    Hai, PN
    Tanaka, M
    APPLIED PHYSICS LETTERS, 2005, 87 (01)
  • [5] Gamma-X electron tunneling in AlAs/GaAs/AlAs double-barrier quantum-well heterostructure
    Kim, GG
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1235 - 1240
  • [6] Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared
    Luna, E
    Hopkinson, M
    Ulloa, JM
    Guzmán, A
    Muñoz, E
    APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3111 - 3113
  • [7] Near-infrared intersubband transitions in InGaAs-AlAs-InAlAs double quantum wells
    Semtsiv, MP
    Ziegler, M
    Masselink, WT
    Georgiev, N
    Dekorsy, T
    Helm, M
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
  • [8] NONRESONANT ELECTRON-CAPTURE IN GAAS ALAS ALGAAS DOUBLE-BARRIER QUANTUM-WELL INFRARED DETECTORS
    SCHNEIDER, H
    VINATTIERI, A
    SHAH, J
    EHRET, S
    LARKINS, EC
    ROSSMANITH, M
    APPLIED PHYSICS LETTERS, 1994, 64 (08) : 1015 - 1017
  • [9] InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm
    Gozu, Shin-ichiro
    Mozume, Teruo
    Kuwatsuka, Haruhiko
    Ishikawa, Hiroshi
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 134 - 136
  • [10] Transition in (001)AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection
    Osotchan, T
    Chin, VWL
    Tansley, TL
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) : 5342 - 5347
12345