GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

被引：9
|
作者：
Ma, B. S. [1 ]
Fan, W. J.
Dang, Y. X.
Cheah, W. K.
Loke, W. K.
Liu, W.
Li, D. S.
Yoon, S. F.
Zhang, D. H.
Wang, H.
Tung, C. H.
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期
关键词：
D O I：
10.1063/1.2767185
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at similar to 1.2 eV. After annealing at 650 degrees C, a large blueshift of 40 meV was observed. The photocurrent peak at 1.24 mu m is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band k center dot p calculations agree with the above observations. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Infrared photocurrent with one- and two-photon absorptions in a double-barrier quantum well system
    Degani, Marcos H.
    Maialle, Marcelo Z.
    Farinas, Paulo F.
    Studart, Nelson
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (10)
  • [22] Coupling effects observed in the intersubband photocurrent of photovoltaic double-barrier quantum-well infrared detectors
    Ehret, S
    Schneider, H
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (12) : 9369 - 9374
  • [23] Origin of intrinsic oscillations in double-barrier quantum-well systems
    Zhao, PJ
    Woolard, DL
    Cui, HL
    Horing, NJM
    PROCEEDINGS OF THE CONFERENCE PROGRESS IN NONEQUILIBRIUM GREEN'S FUNCTIONS II, 2003, : 239 - 246
  • [24] Piezoresistive effect study of double-barrier superlattice quantum well membrane
    National Key Lab. for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
    Guti Dianzixue Yanjiu Yu Jinzhan, 2007, 3 (290-294): : 290 - 294
  • [25] TUNNELING THROUGH ASYMMETRIC DOUBLE-BARRIER QUANTUM-WELL HETEROSTRUCTURES
    ROSSEL, C
    GUERET, P
    MEIER, HP
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 900 - 903
  • [26] Charge character in the double-barrier quantum dots in well hybrid structure
    Ning, Wenguo
    Wang, Weiwei
    Jin, Xiaobo
    Guo, Fangmin
    Yue, Fangyu
    MICRO & NANO LETTERS, 2015, 10 (10) : 533 - 536
  • [27] TIME-DEPENDENT APPROACH TO DOUBLE-BARRIER QUANTUM WELL OSCILLATORS
    LIU, HC
    APPLIED PHYSICS LETTERS, 1988, 52 (06) : 453 - 455
  • [28] The charge character in the double-barrier quantum dots in well hybrid structure
    Jin, X. B.
    Guo, F. M.
    Vue, F. Y.
    2015 IEEE 10TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS), 2015, : 40 - 43
  • [29] Analyses on Mechanical Characteristics of Double-Barrier Quantum well Capacity Varactor
    Zhou, Qiuyun
    Xu, Liping
    Wen, Tingdun
    2010 INTERNATIONAL CONFERENCE ON INFORMATION, ELECTRONIC AND COMPUTER SCIENCE, VOLS 1-3, 2010, : 1186 - +
  • [30] ON THE MECHANISM AND FREQUENCY LIMIT OF DOUBLE-BARRIER QUANTUM-WELL STRUCTURES
    PAN, DS
    MENG, CC
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2082 - 2084
12345