Characterization of amorphous high-k thin films by EXAFS and GIXS

被引：0

作者：

Takemura, Momoko ^{[1
]}

Yamazaki, Hideyuki ^{[1
]}

Ohmori, Hirobumi ^{[1
]}

Yoshiki, Masahiko ^{[1
]}

Takeno, Shiro ^{[1
]}

Ino, Tsunehiro ^{[1
]}

Nishiyama, Akira ^{[1
]}

Sato, Nobutaka ^{[2
]}

Hirosawa, Ichiro ^{[3
]}

Sato, Masugu ^{[3
]}

机构：

[1] Toshiba Co Ltd, Corp R&D, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

[2] Toshiba Nanoanal Crop, Kawasaki, Kanagawa 2128582, Japan

[3] JASRI, Sayogun, Hyogo 6795198, Japan

来源：

SYNCHROTRON RADIATION INSTRUMENTATION, PTS 1 AND 2 | 2007年 / 879卷

关键词：

EXAFS; GIXS; gate insulator; high-k; hafnium oxide; oxynitride; amorphous; SPring-8;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have been suggested based on the analogy to the ordered states for the Zr-O-N ternary system.

引用

页码：1573 / +

页数：2

共 50 条

[41] HIGH-K THIN FILMS AS DIELECTRIC TRANSDUCERS FOR FLEXURAL M/NEMS RESONATORS
Fuinel, Cecile
Daffe, Khadim
Laborde, Adrian
Thomas, Olivier
Mazenq, Laurent
Nicu, Liviu
Leichle, Thierry
Legrand, Bernard
2016 IEEE 29TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS), 2016, : 1193 - 1196
[42] Structural and electrical properties of thin SrHfON films for high-k gate dielectric
Feng, Li-ping
Liu, Zheng-tang
APPLIED PHYSICS LETTERS, 2009, 94 (25)
[43] Microwave Characterization Techniques for High K Thin Films
Sudheendran, K.
Raju, K. C. James
ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII, 2010, 421-422 : 73 - 76
[44] Preparation and characterization of sol-gel derived CaZrO3 dielectric thin films for high-k applications
Yu, T
Zhu, WG
Chen, CH
Chen, XF
Krishnan, RG
PHYSICA B-CONDENSED MATTER, 2004, 348 (1-4) : 440 - 445
[45] Characterization of ZrO2 and PrOx thin films for high-k gate insulator prepared by pulsed laser deposition
Kanashima, T
Sohgawa, M
Kanda, H
Ikeda, K
Okuyama, M
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S1357 - S1361
[46] Fabrication and Characterization of High-k Dielectric Nickel Titanate Thin Films Using a Modified Sol-Gel Method
Chuang, Shiow-Huey
Hsieh, Min-Lung
Wu, Shih-Chieh
Lin, Hong-Cai
Chao, Tien-Sheng
Hou, Tuo-Hung
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (01) : 251 - 255
[47] Electrical, optical and structural characterization of high-k dielectric ZrO2 thin films deposited by the pyrosol technique
G. Reyna-García
M. García-Hipólito
J. Guzmán-Mendoza
M. Aguilar-Frutis
C. Falcony
Journal of Materials Science: Materials in Electronics, 2004, 15 : 439 - 446
[48] Evaluation of the Effects of Thermal Annealing Temperature and High-k Dielectrics on Amorphous InGaZnO Thin Films by Using Pseudo-MOS Transistors
Lee, Se-Won
Cho, Won-Ju
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 60 (09) : L1317 - L1321
[49] Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors
Se-Won Lee
Won-Ju Cho
Journal of the Korean Physical Society, 2012, 60 : 1317 - 1321
[50] Electrical, optical and structural characterization of high-k dielectric ZrO2 thin films deposited by the pyrosol technique
Reyna-García, G
García-Hipólito, M
Guzmán-Mendoza, J
Aguilar-Frutis, M
Falcony, C
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (07) : 439 - 446

← 1 2 3 4 5 →