Microwave Characterization Techniques for High K Thin Films

被引:0
|
作者
Sudheendran, K. [1 ]
Raju, K. C. James [1 ]
机构
[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
关键词
Thin films; dielectric permittivity; microwave; high K;
D O I
10.4028/www.scientific.net/KEM.421-422.73
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin films were characterized at different frequencies using a few techniques by involving coplanar waveguide (CPW) transmission lines circular patch capacitors and split post dielectric resonators. The first two are broadband measurement techniques while the third one is a spot frequency technique.
引用
收藏
页码:73 / 76
页数:4
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