Intersubband absorption in m-plane ZnO/ZnMgO MQWs

被引：4

作者：

Montes Bajo, Miguel ^{[1
]}

Tamayo-Arriola, Julen ^{[1
]}

Jollivet, Arnaud ^{[2
]}

Tchernycheva, Maria ^{[2
]}

Julien, Francois H. ^{[2
]}

Peretti, Romain ^{[3
]}

Faist, Jerome ^{[3
]}

Hugues, Maxime ^{[4
]}

Chauveau, Jean-Michel ^{[4
]}

Hierro, Adrian ^{[1
]}

机构：

[1] Univ Complutense Madrid, ETSI Telecomunicac, ISOM Inst Optoelect Syst & Microtechnol, Ave Complutense 30,Ciudad Univ, E-28040 Madrid, Spain

[2] Univ Paris Saclay, Univ Paris Sud, C2N, Rue Ampere, Orsay, France

[3] ETH, Inst Quantum Elect, Wolfgang Pauli Str 16, CH-8093 Zurich, Switzerland

[4] Univ Cote dAzur, CNRS, CRHEA, Valbonne, France

来源：

OXIDE-BASED MATERIALS AND DEVICES VIII | 2017年 / 10105卷

关键词：

ZnO; ZnMgO; intersubband; terahertz; infrared; homoepitaxy; non-polar; quantum well;

D O I：

10.1117/12.2252056

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

ZnO has great potential for devices in the mid IR and the THz range through the use of intersubband (ISB) transitions in multiple quantum wells (MQWs), although exploiting these transitions requires great control of the epitaxial layers as well as of the physics involved. In this work we present an analysis as ISB optical absorbers of non-polar ZnO quantum wells grown homoepitaxially by molecular beam epitaxy on m-plane ZnO substrates. The MQWs were characterized under a 45 degrees-bevelled multi-pass waveguide configuration allowing the observation at room temperature of an ISB transition in the 4-6 mu m region for p-polarized incident light.

引用

页数：5

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