Size dependence of carrier recombination efficiency in GaN quantum dots

被引：6
|
作者：
Neogi, A [1 ]
Everitt, H
Morkoç, H
Kuroda, T
Tackeuchi, A
机构：
[1] Univ N Texas, Dept Phys, Denton, TX 76203 USA
[2] Duke Univ, Dept Phys, Durham, NC 27708 USA
[3] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[4] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2005年 / 4卷 / 02期
关键词：
GaN; molecular-beam epitaxy; quantum dots (QDs); semiconductor nanostructures; time-resolved photoluminescence (PL);
D O I：
10.1109/TNANO.2004.834170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated. by radiative recombination at low temperatures (< 125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.
引用
收藏
页码：297 / 299
页数：3
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