Efficient Carrier Transfer from Graphene Quantum Dots to GaN Epilayers

被引：0

作者：

Lin, Tzu-Neng ^{[1
,2
]}

Santiago, Svette Reina Merden ^{[1
,2
]}

Yuan, Chi-Tsu ^{[1
,2
]}

Shen, Ji-Lin ^{[1
,2
]}

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli, Taiwan

[2] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli, Taiwan

来源：

NANOPHOTONICS VI | 2016年 / 9884卷

关键词：

photoluminescence; graphene quantum dots; carrier transfer; RECENT PROGRESS; PHOTOCATALYSTS; DIODES; OXIDE;

D O I：

10.1117/12.2227459

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The photoluminescence (PL) properties in GaN epilayers were investigated after depositing graphene quantum dots (GQDs) on the GaN surface. A seven-fold enhancement of the PL intensity in GaN was observed in the GQD/GaN composite. On the basis of the PL dynamics, the enhancement of PL in GaN is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer is caused by the work function difference between GQDs and GaN, evidencing by Kelvin probe measurement. The improved PL is promising toward applications in the GaN-based optoelectronic devices.

引用

页数：7

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