Improved Eu Luminescence Properties in Eu-Doped GaN Grown on GaN Substrates by Organometallic Vapor Phase Epitaxy

被引：4

作者：

Kasai, Hitoshi ^{[1
]}

Nishikawa, Atsushi ^{[1
]}

Kawasaki, Takashi ^{[1
]}

Furukawa, Naoki ^{[1
]}

Terai, Yoshikazu ^{[1
]}

Fujiwara, Yasufumi ^{[1
]}

机构：

[1] Osaka Univ, Div Mat & Mfg Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

Gallium nitride - Organometallics - Europium compounds - Metallorganic vapor phase epitaxy - Substrates - Sapphire - III-V semiconductors - Luminescence;

D O I：

10.1143/JJAP.49.048001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown Eu-doped GaN on a freestanding GaN substrate by organometallic vapor phase epitaxy and investigated its red luminescence that is due to intra-4f shell transitions of Eu3+ ions. The optimum growth temperature for Eu luminescence was 50 degrees C higher than that of Eu-doped GaN on a sapphire substrate. The highest emission intensity was more intense than that on the sapphire substrate, while the Eu luminescence lifetime was identical for both substrates. These results indicate that energy transfer from the GaN host to the Eu3+ ions occurs more efficiently in Eu-doped GaN on the GaN substrate because of a low dislocation density. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.048001

引用

页码：0480011 / 0480012

页数：2

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