Study of the room-temperature ferromagnetic GaMnN thin films

被引：4

作者：

Gao, Xingguo ^{[1
,2
]}

Man, Baoyuan ^{[1
]}

Liu, Mei ^{[1
]}

Yang, Cheng ^{[1
]}

Chen, Chuansong ^{[1
]}

Zhang, Chao ^{[1
]}

Sun, Zhencui ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China

[2] Qilu Univ Technol, Sch Sci, Jinan 250353, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2015年 / 378卷

基金：

中国国家自然科学基金;

关键词：

GaMnN; DMSs; Ferromagnetism; Thin films; MAGNETIC-PROPERTIES; RAMAN-SCATTERING; GAN; EXCHANGE; DONOR;

D O I：

10.1016/j.jmmm.2014.11.075

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Room-temperature ferromagnetic GaMnN thin films were obtained on sapphire (0001) substrate at different temperatures by using laser assisted molecular beam epitaxy, It is found that the structural, morphological and magnetic properties are strongly dependent on the substrate temperature. At room temperature, all the samples show ferromagnetic behavior, which can be explained by the bound magnetic polaron theory. The Mn3+ ions play an important role in the origin of the room temperature ferromagnetism. The saturated magnetization could be weakened by the donor-like nitrogen vacancies, It is found that the optimal substrate temperature is 750 degrees C in our experiments. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：447 / 450

页数：4

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