Intrinsic Room-Temperature Ferromagnetic Properties of Ni-Doped ZnO Thin Films

被引：5

作者：

Jin, C. ^{[1
]}

Aggarwal, R. ^{[2
]}

Wei, W. ^{[2
]}

Nori, S. ^{[2
]}

Kumar, D. ^{[4
]}

Ponarin, D. ^{[3
]}

Smirnov, A. I. ^{[3
]}

Narayan, J. ^{[2
]}

Narayan, R. J. ^{[1
]}

机构：

[1] Univ N Carolina, Joint Dept Biomed Engn, Chapel Hill, NC 27599 USA

[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[3] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA

[4] N Carolina Agr & Tech State Univ, Mech & Chem Engn Dept, Greensboro, NC 27411 USA

来源：

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 2011年 / 42A卷 / 11期

关键词：

DILUTED MAGNETIC SEMICONDUCTOR; SPINTRONICS; OXIDES; MN;

D O I：

10.1007/s11661-010-0479-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on room temperature intrinsic ferromagnetism in Ni doped ZnO films grown on Si (100), c-sapphire, and r-sapphire substrates. Transmission electron microscopy (TEM) data ruled out precipitation of Ni. The microstructural dependence of coercivity pointed to an intrinsic origin of ferromagnetic behavior in Ni-doped ZnO. It was observed that doping with Ni did not significantly affect the electrical and optical properties of ZnO. Resistivity measurements down to 0.04 K (-272.96 A degrees C) showed metallic conducting behavior in Ni-doped ZnO films, indicating the formation of a shallow donor band.

引用

页码：3250 / 3254

页数：5

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