Intrinsic Room-Temperature Ferromagnetic Properties of Ni-Doped ZnO Thin Films

被引：0

作者：

C. Jin

R. Aggarwal

W. Wei

S. Nori

D. Kumar

D. Ponarin

A. I. Smirnov

J. Narayan

R. J. Narayan

机构：

[1] University of North Carolina,Joint Department of Biomedical Engineering

[2] North Carolina State University,Department of Materials Science and Engineering

[3] Intel,Department of Materials Science and Engineering

[4] North Carolina State University,Department of Materials Science and Engineering

[5] Case Western Reserve University,Department of Chemistry

[6] North Carolina State University,Mechanical and Chemical Engineering Department

[7] North Carolina State University,undefined

[8] North Carolina A&T State University,undefined

来源：

Metallurgical and Materials Transactions A | 2011年 / 42卷

关键词：

Impurity Band; Physical Property Measurement System; Room Temperature Ferromagnetism; Microstructural Dependence; Intrinsic Ferromagnetism;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report on room temperature intrinsic ferromagnetism in Ni doped ZnO films grown on Si (100), c-sapphire, and r-sapphire substrates. Transmission electron microscopy (TEM) data ruled out precipitation of Ni. The microstructural dependence of coercivity pointed to an intrinsic origin of ferromagnetic behavior in Ni-doped ZnO. It was observed that doping with Ni did not significantly affect the electrical and optical properties of ZnO. Resistivity measurements down to 0.04 K (−272.96 °C) showed metallic conducting behavior in Ni-doped ZnO films, indicating the formation of a shallow donor band.

引用

页码：3250 / 3254

页数：4

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