Observation of metal-insulator transition in Al-Pd-Re quasicrystals by x-ray absorption and photoemission spectroscopy

被引:3
|
作者
Lay, YY
Jan, JC
Chiou, JW
Tsai, HM
Pong, WF [1 ]
Tsai, MH
Pi, TW
Lee, JF
Ma, CI
Tseng, KL
Wang, CR
Lin, ST
机构
[1] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[3] Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
[4] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
关键词
D O I
10.1063/1.1565183
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using x-ray absorption and valence-band photoelectron spectroscopy (PES) we investigated the electronic structures of icosahedral (i)-Al70Pd22.5Re7.5 quasicrystals (QCs) with a 4.2 K/300 K resistivity ratio, r, ranging from 8.3 to 107 obtained under various annealing conditions. Our Al K- and Pd L-3-edge x-ray absorption results show that the density of states, N(E), near the Fermi level, E-F, jumps to a larger value when r decreases down to below about 20.6. The valence-band PES results show that N(E) near E-F is greatly reduced in i-Al70Pd22.5Re7.5 QCs relative to that of the pure metal, which confirms the existence of the pseudogap. The PES spectrum has a sharp cutoff at E-F for r=8.3 QC, while it decreases smoothly down to zero at E-F for larger r's. The combined results suggest the occurrence of metal-insulator transition at an r between 13 and 20.6. (C) 2003 American Institute of Physics.
引用
收藏
页码:2035 / 2037
页数:3
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